Discrete Semiconductors
Silicon Bridge Rectifier Diode Thyristor DF75BA800 1

Silicon Bridge Rectifier Diode Thyristor DF75BA800 1 sits in our Discrete Semiconductors line, rated for -65 C to +175 C operation and offered against RoHS, AEC-Q101. It is commonly specified for rectification and reverse-polarity protection.
Overview
Silicon Bridge Rectifier Diode Thyristor DF75BA800 1 is selected when the design needs a Discrete Semiconductors part with predictable, traceable performance. Each lot ships with date codes and, on request, a certificate of conformance.
Sourcing and lead time
We hold buffer stock on this reference and place factory orders for high volumes. Standard reel and tray multiples apply for production quantities.
Typical application
In the field, Silicon Bridge Rectifier Diode Thyristor DF75BA800 1 is specified for rectification and reverse-polarity protection; we can suggest equivalents within the same family if a cost-down or second source is needed.
Selection notes
For Silicon Bridge Rectifier Diode Thyristor DF75BA800 1, the dominant trade-offs are rating margin, footprint, and cost at volume; we can map those against equivalents on request.
| Mounting | Panel mount |
|---|---|
| Lead finish | NiPdAu |
| Operating range | -65 C to +175 C |
| Compliance | RoHS, AEC-Q101 |
Figures reflect typical catalog values; confirm against the manufacturer datasheet for your lot.