Discrete Semiconductors
OGH25T120 25A1200V Transistor Igbt High Voltage FGH25T120 1

We supply OGH25T120 25A1200V Transistor Igbt High Voltage FGH25T120 1 for OEM and contract-manufacturing customers. The headline rating is Termination of Press-fit. Lead time and volume pricing are available on request. It is commonly specified for low-side and high-side load switching.
Overview
OGH25T120 25A1200V Transistor Igbt High Voltage FGH25T120 1 is selected when the design needs a Discrete Semiconductors part with predictable, traceable performance. Each lot ships with date codes and, on request, a certificate of conformance.
Typical application
In the field, OGH25T120 25A1200V Transistor Igbt High Voltage FGH25T120 1 is specified for low-side and high-side load switching; we can suggest equivalents within the same family if a cost-down or second source is needed.
Sourcing and lead time
We hold buffer stock on this reference and place factory orders for high volumes. Standard reel and tray multiples apply for production quantities.
Selection notes
For OGH25T120 25A1200V Transistor Igbt High Voltage FGH25T120 1, the dominant trade-offs are rating margin, footprint, and cost at volume; we can map those against equivalents on request.
| Termination | Press-fit |
|---|---|
| Lead finish | Matte tin (Sn) |
| Operating range | -65 C to +175 C |
| Compliance | RoHS, AEC-Q101 |
Figures reflect typical catalog values; confirm against the manufacturer datasheet for your lot.