Discrete Semiconductors
Igbt Module Device Thyristor Module

Igbt Module Device Thyristor Module sits in our Discrete Semiconductors line, rated for -65 C to +175 C operation and offered against RoHS, AEC-Q101. It is commonly specified for wireless connectivity and gateways.
Overview
As a Discrete Semiconductors device, Igbt Module Device Thyristor Module is qualified against RoHS, AEC-Q101 and supplied with full lot traceability for production use.
Selection notes
When evaluating Igbt Module Device Thyristor Module, start from the electrical envelope, then confirm the package suits your placement process and the operating range (-65 C to +175 C) covers your worst-case ambient.
Typical application
Igbt Module Device Thyristor Module is a fit for wireless connectivity and gateways. Provide your operating point and we will verify it against the datasheet limits.
Sourcing and lead time
Availability ranges from same-week shipment to scheduled factory deliveries depending on quantity. Volume breaks begin at full-reel quantities.
| Mounting | Surface mount (SMD) |
|---|---|
| Lead finish | NiPdAu |
| Operating range | -65 C to +175 C |
| Compliance | RoHS, AEC-Q101 |
Figures reflect typical catalog values; confirm against the manufacturer datasheet for your lot.