Discrete Semiconductors
IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet 1
We supply IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet 1 for OEM and contract-manufacturing customers. The headline rating is Termination of Gull-wing. Lead time and volume pricing are available on request. It is commonly specified for rectification and reverse-polarity protection.
Overview
As a Discrete Semiconductors device, IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet 1 is qualified against RoHS, AEC-Q101 and supplied with full lot traceability for production use.
Typical application
IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet 1 is a fit for rectification and reverse-polarity protection. Provide your operating point and we will verify it against the datasheet limits.
Selection notes
When evaluating IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet 1, start from the electrical envelope, then confirm the package suits your placement process and the operating range (-65 C to +175 C) covers your worst-case ambient.
Sourcing and lead time
Availability ranges from same-week shipment to scheduled factory deliveries depending on quantity. Volume breaks begin at full-reel quantities.
| Termination | Gull-wing |
|---|---|
| Lead finish | Matte tin (Sn) |
| Operating range | -65 C to +175 C |
| Compliance | RoHS, AEC-Q101 |
Figures reflect typical catalog values; confirm against the manufacturer datasheet for your lot.