Skip to content

Discrete Semiconductors

IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet

IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet

IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet sits in our Discrete Semiconductors line, rated for -65 C to +175 C operation and offered against RoHS, AEC-Q101. It is commonly specified for rectification and reverse-polarity protection.

Request a quote
View category

Overview

IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet is offered for builds that require Discrete Semiconductors parts rated to -65 C to +175 C, with authorized-channel sourcing and documentation.

Selection notes

Specify IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet by fixing the headline parameter first, then qualifying package, mounting, and compliance (RoHS, AEC-Q101) against your board and end-market.

Sourcing and lead time

Stocked quantities ship from inventory; larger volumes are scheduled through authorized distribution. Request a quote with your annual usage for firm pricing.

Typical application

This part is most often used in rectification and reverse-polarity protection. Share your circuit conditions and we can confirm derating headroom before you commit to a build.

At a glance

Lead finish Matte tin (Sn)
Packaging Tray
Operating range -65 C to +175 C
Compliance RoHS, AEC-Q101

Figures reflect typical catalog values; confirm against the manufacturer datasheet for your lot.

Frequently asked questions

Do you offer a cross-reference for IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet?
We maintain equivalents within the Discrete Semiconductors family and can propose form-fit-function alternatives for last-time-buy situations.
Is IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet suitable for rectification and reverse-polarity protection?
It is commonly specified for rectification and reverse-polarity protection. Share your operating conditions and we will confirm the part stays within its rated limits.
How quickly can IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet ship?
Stocked quantities ship within the same week; factory-ordered volumes are scheduled on quotation. Send your target quantity for a firm lead time.
What is the Lead finish of IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet?
IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet is rated at Lead finish of Matte tin (Sn); full parametrics are listed in the specifications table above.
Is IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet RoHS compliant?
Yes. IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet is supplied against RoHS, AEC-Q101, and declarations of conformity are provided with each shipment.
What is the minimum order quantity for IXFN30N120P IXFN32N60 Rectifier Diode High Power Mos Fet?
MOQ depends on package and stock status. Stocked references can ship in cut-tape, while factory-ordered parts follow standard reel and tray multiples.

References

In this family

All Discrete Semiconductors →Diode P6KE18CA P6KE200CA P6KE15CA 51CA Tvs3528 Smd Photodiode Ambient Light Sensor Ir Receiver Head Infrared Proximity Sensor 006Bridge Rectifier Module Bridge Rectifier 25A KBPC2510BTA100 800B Triac 800V100A Through Hole To 4PL High Power Thyristor Transistor8050SS To 92 Package Npn Transistor 25V 1.5A 1W Through HoleBSD840N SOT363 Nk Fet Mosfet

Related families

Electromechanical & ProtectionOptoelectronics & DisplaysAnalog & Power ICsPassive Components