Discrete Semiconductors
RB161QS 40 DFN1006 2L Electronic Component Schottky Barrier Diode 1

RB161QS 40 DFN1006 2L Electronic Component Schottky Barrier Diode 1 sits in our Discrete Semiconductors line, rated for -65 C to +175 C operation and offered against RoHS, AEC-Q101. It is commonly specified for rectification and reverse-polarity protection.
Overview
As a Discrete Semiconductors device, RB161QS 40 DFN1006 2L Electronic Component Schottky Barrier Diode 1 is qualified against RoHS, AEC-Q101 and supplied with full lot traceability for production use.
Sourcing and lead time
Availability ranges from same-week shipment to scheduled factory deliveries depending on quantity. Volume breaks begin at full-reel quantities.
Typical application
RB161QS 40 DFN1006 2L Electronic Component Schottky Barrier Diode 1 is a fit for rectification and reverse-polarity protection. Provide your operating point and we will verify it against the datasheet limits.
Selection notes
When evaluating RB161QS 40 DFN1006 2L Electronic Component Schottky Barrier Diode 1, start from the electrical envelope, then confirm the package suits your placement process and the operating range (-65 C to +175 C) covers your worst-case ambient.
| Package | DFN1006 |
|---|---|
| Mounting | Surface mount (SMD) |
| Lead finish | NiPdAu |
| Operating range | -65 C to +175 C |
| Compliance | RoHS, AEC-Q101 |
Figures reflect typical catalog values; confirm against the manufacturer datasheet for your lot.