Discrete Semiconductors
SGT60N60FD1PN 60N60FD1 600V60A Through Hole TO3P High Voltage Transistor Igbt 1
SGT60N60FD1PN 60N60FD1 600V60A Through Hole TO3P High Voltage Transistor Igbt 1 is a Discrete Semiconductors part stocked for production builds. The headline rating is Package of TO3P. It is commonly specified for rectification in power front-ends.
Overview
As a Discrete Semiconductors device, SGT60N60FD1PN 60N60FD1 600V60A Through Hole TO3P High Voltage Transistor Igbt 1 is qualified against RoHS, AEC-Q101 and supplied with full lot traceability for production use.
Sourcing and lead time
Availability ranges from same-week shipment to scheduled factory deliveries depending on quantity. Volume breaks begin at full-reel quantities.
Typical application
SGT60N60FD1PN 60N60FD1 600V60A Through Hole TO3P High Voltage Transistor Igbt 1 is a fit for rectification in power front-ends. Provide your operating point and we will verify it against the datasheet limits.
Selection notes
When evaluating SGT60N60FD1PN 60N60FD1 600V60A Through Hole TO3P High Voltage Transistor Igbt 1, start from the electrical envelope, then confirm the package suits your placement process and the operating range (-65 C to +175 C) covers your worst-case ambient.
| Package | TO3P |
|---|---|
| Mounting | Surface mount (SMD) |
| Lead finish | NiPdAu |
| Operating range | -65 C to +175 C |
| Compliance | RoHS, AEC-Q101 |
Figures reflect typical catalog values; confirm against the manufacturer datasheet for your lot.