Discrete Semiconductors
SGT60N60FD1PN 60N60FD1 600V60A Through Hole TO3P High Voltage Transistor Igbt
We supply SGT60N60FD1PN 60N60FD1 600V60A Through Hole TO3P High Voltage Transistor Igbt for OEM and contract-manufacturing customers. The headline rating is Package of TO3P. Lead time and volume pricing are available on request. It is commonly specified for low-side and high-side load switching.
Overview
SGT60N60FD1PN 60N60FD1 600V60A Through Hole TO3P High Voltage Transistor Igbt is offered for builds that require Discrete Semiconductors parts rated to -65 C to +175 C, with authorized-channel sourcing and documentation.
Sourcing and lead time
Stocked quantities ship from inventory; larger volumes are scheduled through authorized distribution. Request a quote with your annual usage for firm pricing.
Selection notes
Specify SGT60N60FD1PN 60N60FD1 600V60A Through Hole TO3P High Voltage Transistor Igbt by fixing the headline parameter first, then qualifying package, mounting, and compliance (RoHS, AEC-Q101) against your board and end-market.
Typical application
This part is most often used in low-side and high-side load switching. Share your circuit conditions and we can confirm derating headroom before you commit to a build.
| Package | TO3P |
|---|---|
| Lead finish | NiPdAu |
| Packaging | Tray |
| Operating range | -65 C to +175 C |
| Compliance | RoHS, AEC-Q101 |
Figures reflect typical catalog values; confirm against the manufacturer datasheet for your lot.